Highly Efficient Deep-UV Emitters Based on Semipolar AlGaN Quantum Wells

Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emi...

Plasma heating in highly excited GaN/AlGaN multiple quantum wells

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increa...

Optimization of GaN Based Light Emitters With Semipolar Quantum Wells and Sub-μm Patterning Within the Active Zone

The selective growth of sub-micrometer sized GaN stripes running along a-direction on c-oriented GaN templates results in semipolar quantum wells (QWs) grown on the {101̄1} side facets that can be embedded easily. Therefore we achieve light emitting devices with semipolar quantum wells on large areas with flat surfaces for easy processing. The influence of the growth mask is thoroughly investiga...

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. A...